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Abstract This work proposes an M-shaped design of quantum wells (QWs) based on a combination of InAs and GaInSb materials forming a broken gap type II system, which can be… Click to show full abstract
Abstract This work proposes an M-shaped design of quantum wells (QWs) based on a combination of InAs and GaInSb materials forming a broken gap type II system, which can be used as an active region of interband cascade lasers emitting in the mid infrared. Results of band structure modelling revealed that compared to more common W-shaped QWs, the M-design can offer some advantages. For instance, there can be obtained a significant electrical tunability of optical transitions oscillator strength and hence also characteristic lifetimes, which would make such structures beneficial in construction of passively mode-locked laser devices.
Journal Title: Optical Materials
Year Published: 2019
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