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A spirofluorene-end-capped bis-stilbene derivative with a low amplified spontaneous emission threshold and balanced hole and electron mobilities

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Abstract To realize high performance in electrically pumped organic semiconductor laser diodes, organic-gain materials with low thresholds of amplified spontaneous emission and laser and balanced hole and electron mobilities are… Click to show full abstract

Abstract To realize high performance in electrically pumped organic semiconductor laser diodes, organic-gain materials with low thresholds of amplified spontaneous emission and laser and balanced hole and electron mobilities are required. However, it is still very difficult to find such well-balanced organic materials. In this study, we show that a spirofluorene-end-capped bis-stilbene derivative of 4-((E)-2-(9,9′-spirobi[fluoren]-3-yl)vinyl)-4'-((E)-2-(9,9′-spirobi[fluoren]-6-yl)vinyl)-1,1′-biphenyl (BSBSF) is an excellent gain medium with a low amplified spontaneous emission threshold of 0.66 μJ cm−2 even in neat films. Additionally, the hole and electron mobilities of BSBSF films are very similar over a wide voltage range. Taking advantage of the balanced mobilities, we were able to obtain suppressed efficiency roll-off in BSBSF-based organic light-emitting diodes. These results will contribute toward fabrication of optically and electrically pumped organic semiconductor laser diodes with high performance.

Keywords: spontaneous emission; hole electron; amplified spontaneous; electron mobilities

Journal Title: Optical Materials
Year Published: 2020

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