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Abstract Highly (100) oriented Y2Hf2O7 thin films were grown on YSZ substrates by magnetron sputtering. The band-gap of 5.1 eV for the Y2Hf2O7 thin film was evaluated by optical transmission spectroscopy.… Click to show full abstract
Abstract Highly (100) oriented Y2Hf2O7 thin films were grown on YSZ substrates by magnetron sputtering. The band-gap of 5.1 eV for the Y2Hf2O7 thin film was evaluated by optical transmission spectroscopy. UV photodetectors based on the Y2Hf2O7 thin films were fabricated. Excellent photoelectric responses were observed in dark and under illumination by low-pressure mercury lamp, such as photo-current to dark-current ratio of 120, photo-responsivity of 139 A/W, and the detectivity of 3.8 × 1013 Jones. The device showed fast response with the rise time of 0.04 s and the decay time of 0.1s.
Journal Title: Optical Materials
Year Published: 2020
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