LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

Effect of 1 MeV electron irradiation on TiO2/Al2O3/MgF2 anti-reflective coating for GaInP/InGaAs/Ge triple junction solar cells

Photo from wikipedia

Abstract In this study, a high performance TiO 2 / Al 2 O 3 / MgF 2 multilayer anti-reflective (AR) coating, with an average reflectivity of 6.36% in spectral range… Click to show full abstract

Abstract In this study, a high performance TiO 2 / Al 2 O 3 / MgF 2 multilayer anti-reflective (AR) coating, with an average reflectivity of 6.36% in spectral range of 300–1800 nm, applied on GaInP/GaAs/Ge triple-junction solar cell was designed by Essential Macleod Program (EMP) software. Based on the simulation results, TiO 2 , Al 2 O 3 , MgF 2 single layer and TiO 2 / Al 2 O 3 / MgF 2 multilayer AR coating samples were grown by Electron Beam Evaporation (EBE) system for 1 MeV electron beam irradiation experiment. The overall reflectivity of TiO 2 / Al 2 O 3 / MgF 2 multilayer AR coating is decreased with the increase of electron irradiation fluence due to the change of reflectivity of each AR layer caused by the refractive index changes. This result indicates that the TiO 2 / Al 2 O 3 / MgF 2 multilayer AR coating can improve the triple junction solar cell radiation resistance by achieving favorable permeability in the broadband solar spectrum, especially in 750–900 nm region where the main degradation spectral window for triple junction solar cell.

Keywords: junction solar; irradiation; tio mgf; electron; triple junction

Journal Title: Optical Materials
Year Published: 2020

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.