Abstract Tm3+- doped GdScO3 single crystal was successfully grown by the edge-defined film-fed method (EFG) for the first time. The spectroscopic properties of the crystal were investigated at room temperature.… Click to show full abstract
Abstract Tm3+- doped GdScO3 single crystal was successfully grown by the edge-defined film-fed method (EFG) for the first time. The spectroscopic properties of the crystal were investigated at room temperature. The absorption cross section of Tm:GdScO3 at 795 nm is 1.58 × 10−20 cm2. By applying the Judd–Ofelt approach, the intensity parameters Ω2,4,6, radiative transition rates, branching ratios and radiative lifetime were calculated. Tm:GdScO3 exhibits strong emission at 1460 nm and 2300 nm with stimulated emission cross section of 1.8 × 10−21 cm2 and 2.7 × 10−21 cm2, respectively. The fluorescence lifetime of the 3H4 level was measured to be 265 μs. All the results indicated that the Tm:GdScO3 crystal is a potential laser material.
               
Click one of the above tabs to view related content.