LAUSR

Abstract In this study, metal-semiconductor contact with an organic interlayer was fabricated. Ideality factor (n), barrier height ( φ b ), and series resistance (Rs) values for Co/Gold-chloride/p-Si structure were calculated for dark and 100–400 mW/cm2 light illumination intensities. The current-voltage (I–V) measurements were used to extract the electrical parameters of Co/Gold-chloride/p-Si device such as ideality factor, barrier height and series resistance using different methods like thermionic emission theory and Norde method. The n values were found in the range of 2.00–2.52 and the φ b were calculated in the range of 0.50–0.53 eV and under light power intensities. Additionally, frequency-dependent capacitance-voltage (C–V) measurements were done at room temperature and frequency range from 100 kHz to 1 MHz. The results show that at sufficiently high frequencies, the interface cannot flow A.C signals. Furthermore, barrier height was also calculated from the C−2-V plot for given the frequency range for Co/Gold-chloride/p-Si device. With this study, it has been shown that the rectifier contact of the organic-inorganic structure formed with suitable organic and inorganic semiconductor can be formed and this structure can be used in optoelectronic applications.