LAUSR

Abstract We examine the probability of carriers in a 770 nm InAsP quantum dot (QD) laser by analyzing Fermi-Dirac distribution using the segmented contact method. This study compares the results of InAsP QD materials with the standard 720 nm InP QD laser that was developed by Cardiff University. Both samples were grown under the same conditions on a compatible wafer. InAsP QD showed non-uniformity in the dot size with a higher strain field, as evidenced by transmission electron microscopy images, as well as a deeper dot confinement by approximately 100 meV, as confirmed by Photovoltage Spectroscopy. This study revealed a breakdown of the Fermi-Dirac distribution at 150 K for InAsP QD materials. This could make InAsP a capable applicant for the ultrafast source generation.