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Abstract Investigation of mechanical strain on the electrical characteristics of ferroelectric OFET base memory is crucial for novel flexible printed circuit. In this regards, the effects of compressive and tensile… Click to show full abstract
Abstract Investigation of mechanical strain on the electrical characteristics of ferroelectric OFET base memory is crucial for novel flexible printed circuit. In this regards, the effects of compressive and tensile strain applied in parallel, 45° angle and perpendicular to the semiconductor channel were studied showing critical consideration to be taken into account before designing flexible memories.
Keywords:
mechanical strain;
ferroelectric ofet;
strain;
strain induced;
memory;
electrical characteristics
Journal Title: Organic Electronics
Year Published: 2017
Link to full text (if available)
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Journal Title: Organic Electronics
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!