Abstract In this paper, we present an approach to determinate the traps density in pentacene semiconductor. The influences of both traps distribution (exponential, gaussian) and temper-ature have been investigated. The… Click to show full abstract
Abstract In this paper, we present an approach to determinate the traps density in pentacene semiconductor. The influences of both traps distribution (exponential, gaussian) and temper-ature have been investigated. The defects density associated with pentacene was extracted by fitting the simulated and experimental curves. Current-voltage characteristics are performed using a physically based device simulator. Simulation results show a good agreement with experimental.
               
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