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Abstract IGZO-based Schottky diodes have applications in high-speed electronics. However, these devices generally require noble metals to form a Schottky contact, which was one of the problems for their early… Click to show full abstract
Abstract IGZO-based Schottky diodes have applications in high-speed electronics. However, these devices generally require noble metals to form a Schottky contact, which was one of the problems for their early commercialization. This study demonstrates the successful use of a semi-transparent carbon paste (CP) that is low-cost and which has a high work function as the Schottky contact for a Schottky junction for a-IGZO. After sintering, the crystalline quality of CP is improved so the series resistance of IGZO-based Schottky diodes decreases. Increasing the sintering temperature of the CP produces an increase in the work function of 0.24 eV, which gives a higher Schottky barrier height and better rectified performance. Using CP as the Schottky contact allows the manufacture of low-cost high performance IGZO-based Schottky diodes.
Journal Title: Organic Electronics
Year Published: 2019
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