LAUSR

Abstract Artificial synaptic devices have raised the concern of many researchers in the field of neural computing and artificial neural network. Ion gel-modulated synaptic transistors with solution-processed In2O3 semiconductors are demonstrated in this paper. The devices show good electrical performance, including a low operating voltage of 3 V and a large Ion/Ioff ratio of 3.86 × 105. More importantly, a series of basic biosynaptic behaviors, such as excitatory post-synaptic current (EPSC), synaptic plasticity, high pass filtration, and memory can be generated applying a presynaptic voltage or light pulses. Furthermore, a dynamic logic function was demonstrated by applying spatiotemporally related hybrid optoelectronic pulses. This study can pave a way for the development of hybrid optoelectronic artificial neural networks and open up a new strategy for further advances in synaptic electronics.