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Saturated antisolvent pressure induced perylene diimide nanowires with high degree of electron delocalization

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Abstract Perylene diimide (PDI) nanowires were fabricated by saturated antisolvent pressure induced method. The antisolvent facilitates PDI molecules aggregation forming clusters because of the local supersaturation at the interface. When… Click to show full abstract

Abstract Perylene diimide (PDI) nanowires were fabricated by saturated antisolvent pressure induced method. The antisolvent facilitates PDI molecules aggregation forming clusters because of the local supersaturation at the interface. When the cluster size reaches critical size, the antisolvent would promote clusters assembling along one-dimension gradually. The decreased decay lifetime of PDI nanowires illustrates the changeable PDI molecule conformation and decreased trap-state density. Temporally and spatially resolved fluorescence measurement reveals the uniform and ordered arrangement in individual nanowire. The π-electron delocalization along the π-π stacking direction is in favor of long-range charge migration. The applied bias on PDI nanowires enables electrons migration along the π-electron delocalization rapidly, resulting in more than 3 orders of magnitude current increment.

Keywords: saturated antisolvent; pressure induced; delocalization; antisolvent pressure; perylene diimide; electron delocalization

Journal Title: Organic Electronics
Year Published: 2019

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