LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

The effect of Zn doping on CdO thin films grown by SILAR method at room temperature

Photo by introspectivedsgn from unsplash

Abstract In this study, undoped and 0.3%, 1.7% and 4.5% Zn doped CdO thin films were grown by successive ionic layer adsorption and reaction (SILAR) method on the soda lime… Click to show full abstract

Abstract In this study, undoped and 0.3%, 1.7% and 4.5% Zn doped CdO thin films were grown by successive ionic layer adsorption and reaction (SILAR) method on the soda lime glass substrate at room temperature. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), Raman and Photoluminescence (PL) spectrometer measurements of the samples were taken to observe how the Zn doping effects on the structural, optical and morphological properties of CdO. XRD measurements show that the samples have the cubic structure. It was observed that calculated by the absorption measurements band gaps varied from 1.62 eV to 2.66 eV with changing Zn dopant in the CdO structure. It was observed that the samples surface morphologies were affected by Zn-doping and its rate. The Raman spectra of undoped and Zn doped CdO thin films were observed that 288 cm−1, 557 cm−1, 937 cm−1. The PL spectrum showed that the PL intensity increases with Zn doping in CdO. The PL spectra showed that Zn ions were located in the structure of CdO.

Keywords: thin films; silar method; cdo; films grown; room temperature; cdo thin

Journal Title: Physica B: Condensed Matter
Year Published: 2019

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.