LAUSR

Abstract By using electron beam evaporation method, we have fabricated three AuGe ultrathin films with thickness of 8 nm, 11 nm and 15 nm respectively. The low temperature magnetoresistances of these films were measured. A sharply dip in the low-field magnetoresistance curves was observed in the AuGe films, which was associated to the weak anti-localization effect. Comparing our experimental results with theoretical predictions, we have extracted the temperature dependence of phase relaxation length L ϕ ( T ) , which meets to the scaling law of L ϕ ∝ 1 / T . This observation certificated that the electron-phonon interaction plays a dominant role in the electron phase relaxation processes of AuGe films.