LAUSR

Abstract Atomic thinness, excellent transport property and gate-tunable band structure of graphene render it a potential electrode material for assembling ultra thin electronic devices. Here, we present back gate field effect transistor based on exfoliated monolayer (ML) ReS2 as channel semiconductor and exfoliated ML-graphene as drain-source electrodes. The G and 2D peaks of ML-graphene stiffen significantly and their intensity ratio increases as well when the graphene is encapsulated between the SiO2/Si substrate and ReS2. Owing to the excellent electron transport properties of the ML-ReS2 and gate-tunable Fermi-level of the underlying ML-graphene, the transistor exhibits on/off current ratio exceeding 106, mobility of ∼1.1 cm2 V−1s−1 and subthreshold swing ∼740 mV per decade. This work indicates that ML-graphene is an excellent electrode material for fabricating atomically thin ReS2 electronic devices.