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Seebeck and Nernst effects in topological insulator: The case of strained HgTe

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Francisco J. Peña, ∗ Oscar Negrete, 2, † Ning Ma, ‡ Patricio Vargas, 2, § M. Reis, ¶ and Leandro R. F. Lima ∗∗ Departamento de F́ısica, Universidad Técnica Federico… Click to show full abstract

Francisco J. Peña, ∗ Oscar Negrete, 2, † Ning Ma, ‡ Patricio Vargas, 2, § M. Reis, ¶ and Leandro R. F. Lima ∗∗ Departamento de F́ısica, Universidad Técnica Federico Santa Maŕıa, Casilla 110-V2390123 Valparáıso, Chile Centro para el Desarrollo de la Nanociencia y la Nanotecnoloǵıa, 8320000 Santiago, Chile Department of Physics, College of Physics and Optoelectronic Engineering, and MOE Key Laboratory of Advanced Transducers Intelligent Control System, Taiyuan University of Technology, Taiyuan 030024, China Institute of Physics, Fluminense Federal University, Av. Gal. Milton Tavares de Souza s/n, 24210-346, Niteroi-RJ, Brazil Departamento de F́ısica, Instituto de Ciências Exatas, Universidade Federal Rural do Rio de Janeiro, 23897-000 Seropédica RJ, Brazil

Keywords: nernst effects; seebeck nernst; insulator case; physics; effects topological; topological insulator

Journal Title: Physica B: Condensed Matter
Year Published: 2021

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