Abstract Based on the pseudopotential method and the phenomenological model of coupling forces, electron scattering by short-wavelength phonons in the conduction band of superlattices ( GaAs)m(AlAs)n with thin layers (n,… Click to show full abstract
Abstract Based on the pseudopotential method and the phenomenological model of coupling forces, electron scattering by short-wavelength phonons in the conduction band of superlattices ( GaAs)m(AlAs)n with thin layers (n, m ≤ 10) is studied. Intervalley deformation potentials for transitions between the lower states of the Γ and M valleys of superlattices, which are analogs of the sphalerite transitions of Γ − X and X − X , are calculated. The intensity of the Γ − M transitions is determined mainly by the longitudinal optical vibrations of the Al atoms and depends strongly on the mixing of the states Γ and X . The capture of phonons and electrons in AlAs layers leads to an increase in the deformation potentials of X − X transitions.
               
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