Abstract In this study, indium sulfide (β-In 2 S 3 ) thin films were synthesized on fluorine doped tin oxide (FTO) coated glass substrates by hydrothermal reactions. The hydrothermal reaction… Click to show full abstract
Abstract In this study, indium sulfide (β-In 2 S 3 ) thin films were synthesized on fluorine doped tin oxide (FTO) coated glass substrates by hydrothermal reactions. The hydrothermal reaction time (HRT) was varied from 4 to 16 h and the synthesis temperature was maintained at 160 °C. The morphological, physical and electrochemical properties of the processed In 2 S 3 films show a clear HRT dependency. XRD analysis indicates that both crystallinity and crystal size increase as HRT increases. UV–Vis absorbance spectra analysis reveals that the HRT influence greatly the In 2 S 3 optical properties with an estimated band gap varying from 3.6 to 2.1 eV. We present as well, the influence of the HRT on the photo-electrochemical performances of In 2 S 3 based photo-anodes investigated with electrochemical impedance spectroscopy (EIS). In 2 S 3 photo-anodes with a photocurrent as high as 1 mA cm −2 at 0.5 V were prepared for a HRT equal to 12 h. These experimental findings promote the hydrothermal method as a simple, low cost and low temperature route allowing the preparation of β-In 2 S 3 thin films on FTO glass suitable for photo-electrochemical applications.
               
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