LAUSR

Abstract The technology is growing very rapidly, and the micro scale devices are playing a very important role in the electronic, mechanical and other application areas due to their integrability with CMOS IC technology, low power consumption, low cost fabrication and large frequency-Quality factor product. As there is a much demand for small and portable devices the applications of micro devices like MEMS based Bulk Acoustic Wave (BAW) resonators are rapidly increasing. In this paper we will present the analysis of thin-film BAW resonator designed in 2D using eigenfrequency, by using the Aluminium Nitrid (AIN) and Lithium Niobate (LiNbO3) materials and try to achieve a high quality ( Q) factor compared with bibliography. The Q-factor is the most important characteristics of a resonator because it describes the frequency selectivity of the device. The high Q-factor greatly helps to implement extremely selective IF and RF filters with small percent bandwidth and low insertion loss.