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Abstract The hot carrier injection (HCI) effect induced degradation is investigated for gamma ray irradiated PD I/O SOI PMOSFETs with T-shaped gate and H-shaped gate. Radiation enhanced effect on degradation… Click to show full abstract
Abstract The hot carrier injection (HCI) effect induced degradation is investigated for gamma ray irradiated PD I/O SOI PMOSFETs with T-shaped gate and H-shaped gate. Radiation enhanced effect on degradation during hot carrier stress is observed in two kinds of samples. And it is observed that radiation has more significant effect on T-gate devices than H-gate during stress time. Besides, the change on gate current degradation induced by irradiation is also worth noticing.
Keywords:
hot carrier;
soi pmosfets;
study effects;
gate;
effect
Journal Title: Results in Physics
Year Published: 2019
Link to full text (if available)
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Journal Title: Results in Physics
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!