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Abstract The formulas for temperature dependence of λ(χreal, Eg, T), λ(χreal, Eg, T)p, ẟ and σ of insulators with less impurities were deduced and proved to be true; λ(χreal, Eg,… Click to show full abstract
Abstract The formulas for temperature dependence of λ(χreal, Eg, T), λ(χreal, Eg, T)p, ẟ and σ of insulators with less impurities were deduced and proved to be true; λ(χreal, Eg, T) is the mean escape depth of secondary electrons emitted from insulators with efficient electron affinity χreal and band gap Eg at Kelvin temperature T, λ(χreal, Eg, T)p is the λ(χreal, Eg, T) due to electron-lattice scatterring in insulators, ẟ is secondary electron yield, σ is total ẟ. Analyses of data and the deduced formulas indicate that the temperature dependence of ẟ and σ of insulators with less impurities increase with the increasing [λ(χreal, Eg, T)/λ(χreal, Eg, T)p], and that λ(χreal, Eg, T), λ(χreal, Eg, T)p, ẟ and σ of insulators with less impurities decrease nearly linearly with increasing T in the range T > ΘD but decrease nonlinearly with increasing T in the range mΘD
Journal Title: Results in physics
Year Published: 2020
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