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Deterioration of near-UV GaN-based LEDs in seawater vapour

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Abstract Reliability investigations were conducted after GaN-based LEDs were stressed in seawater vapour. Multiple electrical, optical, and material analyses on the fine nanostructures of the LED were examined. Results indicate… Click to show full abstract

Abstract Reliability investigations were conducted after GaN-based LEDs were stressed in seawater vapour. Multiple electrical, optical, and material analyses on the fine nanostructures of the LED were examined. Results indicate that dark spots on the surface and etching trenches observed on the cross section might damage the quantum well and degrade LED performance. Dissolved sodium ions might diffuse and punch through the quantum well and be responsible for these spots and trenches.

Keywords: based leds; leds seawater; deterioration near; seawater vapour; gan based; near gan

Journal Title: Results in physics
Year Published: 2020

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