LAUSR

Abstract This paper has studied the metal-insulator-semiconductor (MIS) contact for both p- and n-InGaN. We found that the insulator layer thickness has a remarkable effect on the Fermi level pinning and barrier height reduction in MIS contacts. Schottky's formation with doped InGaN is explained by extending the MIS contacts' using the metal-induced gap states (MIGS) model. The J-V characteristics clarify the current transport mechanism through the MIS contact with InGaN semiconductor for different temperatures. We observed less control on the barrier height reduction in the case of n-InGaN through changing the thickness of the interfacial layer. The calculated contact resistivities of MIS contact with p- and n-InGaN show better results than the metal-semiconductor contact counterparts. These findings are highly significant to design and fabricate the InGaN based switching devices for converter applications.