LAUSR

Abstract SnTe, as the nontoxic analogue to high-performance PbTe thermoelectric material, has captured the worldwide interest recently. Many triumphant instances focus on the strategies of band convergence, resonant doping, and nano-precipitates phonon scattering. Herein, the p-type SnTe-based materials Sn0.85−xSb0.15MgxTe (x = 0–0.10) are fabricated and a combined effect of Sb and Mg is investigated. Sb alloying tunes the hole carrier concentration of SnTe and decreases the lattice thermal conductivity. Mg alloying leads to a nearly hundredfold rise of disorder parameter due to the large mass and strain fluctuations, and as a consequence the lattice thermal conductivity decreases further down to ∼0.64 W m−1 K−1 at 773 K, close to the theoretical minimum of the lattice thermal conductivity (∼0.50 W m−1 K−1) of SnTe. In conjunction with the enhancement of the Seebeck coefficient caused by band convergence due to Mg alloying, the maximum zTmax reaches ∼1.02 and the device zTdevice of ∼0.50 at 773 K for Sn0.79Sb0.15Mg0.06Te, suggesting this SnTe-based composition has a promising potential in intermediate temperature thermoelectric applications.