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On the role of atomic shuffling in the 4O, 4M and 8M martensite structures in Ni-Mn-Sn single crystal

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Abstract The crystal structure of a four-layered martensite phase in Ni50Mn37.5Sn12.5 single crystal following various modes of training procedure was examined by high energy synchrotron radiation and high-resolution transmission electron… Click to show full abstract

Abstract The crystal structure of a four-layered martensite phase in Ni50Mn37.5Sn12.5 single crystal following various modes of training procedure was examined by high energy synchrotron radiation and high-resolution transmission electron microscopy. Three distinct types of unit cell i.e. 4O, 4M, and 8M were unveiled, depending on the mechanical history of the specimen. The most stable phase turned out to be the 4M martensite. Analysis of the intensity of modulation reflections allowed for defining a periodic atomic displacement of 0.3497 A. The results support the concept of a periodic atomic shuffling as opposed to the adaptive nanotwining approach.

Keywords: atomic shuffling; shuffling martensite; single crystal; martensite structures; structures single; role atomic

Journal Title: Scripta Materialia
Year Published: 2020

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