LAUSR

Abstract In this work, strain dependent effect on power degradation of thin film Cu(In.Ga)Se2 (CIGS) solar cell is studied though experimental methods. Strain leads to grain boundary cracking of CIGS absorption layer and delamination of CIGS-Mo interface. Experimental methods include the tensile testing, X-ray diffraction (XRD), scanning electron microscope (SEM). Multi-linear responses with negative coefficients between strain and short-circuit current and open-circuit voltage are observed. The first linear region is caused by the grain boundary cracking of CIGS layer. The second linear region is caused by the delamination at CIGS-Mo interface. Correction formula of the cell maximum power output due to applied strain is derived from slope coefficients. The connections between stress (tensile and shear) and failure modes (boundary cracking and delamination) of CIGS thin film cell are discussed.