LAUSR

Abstract p-type ZnSe nanoribbon and n-type Si nanowire are used to prepare crossed p-n nano-heterojuncion through a two step of contact sliding transfer method. Obvious diode characteristics with a large rectification ratio of ~ 20 and a small ideality factor of ~ 2.1 are presented due to the nano-heterojunction's half-surrounded structure and the appropriate energy band alignment between the two materials. Kelvin probe force microscopy measurement and temperature-dependent electrical characterization are devoted to demonstrate the energy barrier and investigate the transport mechanism of the nano-heterojunction. Moreover, under AM 1.5G light illumination, the crossed nano-heterojunction exhibits evident photovoltaic behavior, yielding a power conversion efficiency of ~3%. Our results demonstrate the great potential of the prepared crossed nano-heterojunction in high-performance nano-device applications.