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Abstract Immeasurably low surface recombination of crystalline-silicon wafers is demonstrated with an oxide-nitride-oxide (ONO) corona charged dielectric stack. We detail experimental variations to each layer of the dielectric stack to… Click to show full abstract
Abstract Immeasurably low surface recombination of crystalline-silicon wafers is demonstrated with an oxide-nitride-oxide (ONO) corona charged dielectric stack. We detail experimental variations to each layer of the dielectric stack to establish a procedure which provides outstanding passivation properties on textured and planar silicon wafers. We demonstrate surface recombination velocities of
Keywords:
passivation;
dielectric stack;
exceptional silicon;
surface
Journal Title: Solar Energy Materials and Solar Cells
Year Published: 2019
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Journal Title: Solar Energy Materials and Solar Cells
Year Published: 2019
Link to full text (if available)
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recommendations!