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Abstract We report on the study of 1.0 eV InGaAsP solar cells grown by metalorganic vapor phase epitaxy (MOVPE) on InP. Under standard one-sun air-mass 0 (AM0) illumination, InGaAsP single junction… Click to show full abstract
Abstract We report on the study of 1.0 eV InGaAsP solar cells grown by metalorganic vapor phase epitaxy (MOVPE) on InP. Under standard one-sun air-mass 0 (AM0) illumination, InGaAsP single junction solar cell grown at temperature 650 °C presents remarkable photovoltaic performance. With further growth improvements, solar cell presents an efficiency of 19.1% with an open-circuit voltage (Voc) of 693 mV. The experimental bandgap-voltage offset (Woc) as low as 325 mV is achieved, approaching its theoretical value predicted using diffusion-limited model.
Journal Title: Solar Energy Materials and Solar Cells
Year Published: 2019
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