LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

Toward an all-Atomic Layer Deposition (ALD) process for Cu(In,Ga)(S,Se)2 (CIGS)-type solar cell

Photo by stayandroam from unsplash

Abstract Atomic Layer Deposition (ALD) is a well-suited technique to prepare thin film heterostructures for solar cell applications. In this work, we explore the feasibility of preparing complete CIGS-type solar… Click to show full abstract

Abstract Atomic Layer Deposition (ALD) is a well-suited technique to prepare thin film heterostructures for solar cell applications. In this work, we explore the feasibility of preparing complete CIGS-type solar cells by ALD, namely the absorber layer, the buffer layer and the transparent conducting oxide window layers, with a focus on using an ultra-thin CIGS-type layer (

Keywords: cigs type; deposition ald; layer; atomic layer; layer deposition; solar cell

Journal Title: Solar Energy Materials and Solar Cells
Year Published: 2019

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.