LAUSR

Abstract In this paper, the effect of fringe induced barrier lowering (FIBL) in-conjunction with channel parameters that includes channel thickness (TSi), channel length (Lg) and lateral straggle ( σ L ) on analog and RF performance of FinFET, have been studied using TCAD mixed-mode Sentaurus device simulator. We focused on the variation in analog (intrinsic dc gain) and RF (cut-off frequency) figure of merit (FOM) of high-K gate dielectric based FinFET with respect to channel parameters. It is observed that the variation in intrinsic dc gain (ΔAV) aggravates with TSi scaling. We also observe a mixed response to the ΔAV with respect to variation in Lg and σ L , where ΔAV follows an inverse parabolic behavior peaking at an intermediate value of Lg and σ L . Variation in cut-off frequency (ΔfT) on the other hand, is negligible (slightly increases with TSi and decreases with Lg and σ L ). These properties of channel parameters can be handy in designing of high-K gate dielectric based FinFET for analog circuits.