LAUSR

Abstract High-performance 400 nm near-UV LEDs are obtained by a carbon nanotube (CNT) assisted nanoheteroepitaxy (NHE) method on both conventional and patterned sapphire substrates. It is revealed that the threading dislocation density in GaN can be significantly reduced by using CNT mask. As a result, the performance of near-UV LED on CNT mask is prominently boosted, including higher optical power, lower reverse-bias leakage and improved heat dissipation. Furthermore, the efficiency droop in near-UV LED is proved to be clearly mitigated. In this way, the device performance of near-UV LED is greatly improved in various ways by CNT-assisted NHE, which demonstrates great importance and application potential for high-performance short-wavelength LEDs.