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Abstract We demonstrate how the tunneling current can be amplified in a vertical graphene/h-BN heterostructure device. The doping concentration of the graphene layers is designed in such a way that… Click to show full abstract
Abstract We demonstrate how the tunneling current can be amplified in a vertical graphene/h-BN heterostructure device. The doping concentration of the graphene layers is designed in such a way that the Dirac points line up, to achieve a large resonant tunneling current. We derive analytical and numerical expressions for the current-voltage characteristics of the heterostructure. The effect of both heterostructure and rotational alignment on the tunneling current is discussed. We find that the transition rate between layers is larger for states above the Dirac point.
Journal Title: Superlattices and Microstructures
Year Published: 2017
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