LAUSR

Abstract In this work, we study the effect of annealing temperature on structural, optical and electrical properties of Cu2ZnSnS4 synthetized by sol gel method and deposited by spin coating technique. The samples were annealed in air at 300 °C, 325 °C and 350 °C during 10 min. The X-ray diffraction and Raman spectroscopy exhibit the formation of pure kesterite structure of CZTS. The optical parameters have been calculated from the transmittance and absorbance data giving by UV–Visible spectrophotometer in the range between 350 and 1000 nm. The band gap energy increased from 1.5 to 1.63 eV, in addition to a better electrical resistivity in the range of 0.1–0.15 (Ω cm) was found by four point probe method. A small band gap energy and best resistivity make our deposited films a suitable material as an absorber layer in photovoltaic solar cells.