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Effect of the δ-potential on spin-dependent electron tunneling in double barrier semiconductor heterostructure

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Abstract The effect of δ -potential was studied in GaAs/Ga0.6Al0·4As double barrier heterostructure with Dresselhaus spin-orbit interaction. The role of barrier height and position of the δ - potential in… Click to show full abstract

Abstract The effect of δ -potential was studied in GaAs/Ga0.6Al0·4As double barrier heterostructure with Dresselhaus spin-orbit interaction. The role of barrier height and position of the δ - potential in the well region was analysed on spin-dependent electron tunneling using transfer matrix method. The spin-separation between spin-resonances on energy scale depends on both height and position of the δ - potential, whereas the tunneling life time of electrons highly influenced by the position of the δ - potential and not on the height. These results might be helpful for the fabrication of spin-filters.

Keywords: barrier; spin dependent; effect potential; dependent electron; double barrier; spin

Journal Title: Superlattices and Microstructures
Year Published: 2018

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