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Abstract In this work, GaN-based vertically conducting near ultraviolet light-emitting diodes (LEDs) were grown on n-SiC substrates by metal-organic chemical vapor deposition. 10 pairs or 20 pairs of Si-doped n-Al0.2Ga0.8N/n-GaN… Click to show full abstract
Abstract In this work, GaN-based vertically conducting near ultraviolet light-emitting diodes (LEDs) were grown on n-SiC substrates by metal-organic chemical vapor deposition. 10 pairs or 20 pairs of Si-doped n-Al0.2Ga0.8N/n-GaN distributed Bragg reflectors (DBRs) were used to improve the performance of the LEDs. The central reflected wavelength of the DBRs structures agreed well with the emission wavelength of the LEDs. A 389 nm near ultraviolet electroluminescence (EL) emission peak could be clearly observed in all the LED samples in our study. The EL intensity of LEDs was obviously enhanced because of the application of DBRs. Angle-dependent EL spectra were measured as well. For all the measurement angle region, the near ultraviolet EL emission intensity of the LEDs with DBRs were higher than that of the LED without DBRs.
Journal Title: Superlattices and Microstructures
Year Published: 2019
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