LAUSR

Abstract In this paper, effect of gamma radiation on SOI-based Tunnel Field Effect Transistor and its application as radiation dosimeter has been investigated. Throughout the paper, the exhaustive simulations have been carried out in order to investigate the generation of the electrons and holes in the oxide region and to anticipate the characteristics of the device from subthreshold region to strong accumulation/inversion region. It is found that under the radiation environment, the radiation induced degradation in threshold voltage shift and interface trap charge could not be ignored. It is concluded that the impact of radiation is visible in the subthreshold region of the drain current than on-state of drain current. Moreover, the radiation characteristics of SOI TFET have been compared with SOI MOSFET to assess its application as a dosimeter. In order to obtain the radiation characteristics of the SOI TFET, Gamma radiation model of sentaurus TCAD has been used.