LAUSR

Abstract The ideality factor value of silicon n + − p solar cells with iron contaminants has been studied by means of computer simulation. The iron concentration range of 1 0 10 − 1 0 13  cm−3, base doping level range of 1 0 15 − 1 0 17  cm−3, and temperature range of 290 − 340  K were used in the investigation. The Solar Cells Capacitance Simulator (SCAPS) was the tool used for numerical simulation of these devices. The two-diode model was used to extract the ideality factor. The following cases were considered: (i) Shockley–Read–Hall (SRH) recombination; (ii) both intrinsic recombination and SRH recombination; (iii) unpaired interstitial iron atoms; (iv) both iron–boron pairs and interstitial iron atoms. The algorithms of iron concentration evaluation in silicon solar cell by using current–voltage curve are proposed. The analytic expressions are suggested as well as calibration curves are calculated.