LAUSR

Abstract Wireless power harvesting technology can convert RF energy into DC energy, but the main RF energy density in the environment is relatively low. Therefore, in order to improve the rectification efficiency of the transmission system under 2.45 GHz relatively weak energy density, this paper studies the influencing factors of rectification efficiency. Based on device optimization, a silicon layer combination contact GeSn Schottky diode structure for 2.45G relatively weak energy harvesting is proposed in this paper, which is simulated and verified using Silvaco and ADS simulation tools. The results show that the current responsivity and the turn-on voltage of GeSn Schottky diode with Si layer is about 21.5 A W−1 and 0.18 V, respectively. Under the condition of 2.45 GHz and −10 dBm relatively weak energy density, its rectification efficiency is about 10%, and when the input energy is 0 dBm, its rectification efficiency can reach 40%, twice that of ordinary Ge Schottky diodes.