LAUSR

Abstract The negative permittivity of silicon-based PiN diodes is investigated experimentally in the frequency range from 1 Hz to 10 MHz, where electron irradiations and annealing thermal treatments are carried out. The permittivity is found be greatly affected by electron irradiations. In addition, the dispersion-free region is found be occurred in the samples irradiated by electron dose≥5.4646 × 1014 e/cm2. Besides, annealing treatments also have an effect on the permittivity. It is interesting to find that, the annealing treatments lead to more negative platform (i.e., dispersion-free region) values of permittivity for samples irradiated by electron dose≥5.4646 × 1014 e/cm2, and the negative platform values under 350 °C annealing treatment are lower than that under 150 °C annealing treatment when the electron irradiation dose is higher than 1.0929 × 1015 e/cm2. The novel phenomenon found in this work may provide new ideas for the application of semiconductor devices in information transmission, storage and processing.