LAUSR

Abstract With the rapid development of semiconductor process, both tunneling field effect transistor (TFET) and negative capacitance field effect transistor (NCFET) are regarded as the effective low power devices. In this paper, a novel silicon-based dual source U-shaped channel TFET with negative capacitance (NCDU-TFET) is proposed and investigated by Synopsys Sentaurus TCAD. We pick ferroelectric material (Hf0.5Zr0.5O2) as the gate dielectric. The higher electric field caused by negative capacitance effectively increases the tunneling rate, so the super-steep subthreshold swing (SS) and higher on-state current are obtained for NCDU-TFET. Besides, the impacts of device parameters including gate dielectric layer thickness, coercive electric field and remnant polarization are also analyzed systematically in this paper. The simulation results indicate the average SS of NCDU-TFET is 17.04mV/dec, which is much lower than that of DU-TFET. And the on-state current of NCDU-TFET is nearly three orders of magnitude higher than that of DU-TFET. So NCDU-TFET has the potential to be used as a low-power component for large-scale integrated circuits.