Abstract To overcome the technological problem of the low In incorporation in InGaN based heterostructures we consider superlattices of the type: InxGa1-xN/InyGa1-yN (x>y). It is shown that the structures of… Click to show full abstract
Abstract To overcome the technological problem of the low In incorporation in InGaN based heterostructures we consider superlattices of the type: InxGa1-xN/InyGa1-yN (x>y). It is shown that the structures of the proposed type allow for a more precise tuning of the emission energy and shift of the light emission to lower energies by about 400 meV (50-60 nm) compared to the conventional InxGa1-xN/GaN SLs with the same concentration x. The above conclusions were drawn on the basis of comparing the calculated ab-initio band gaps with the photoluminescence emission energies obtained from the measurements performed on the specially designed samples grown by metal-organic vapor phase epitaxy.
               
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