LAUSR

Abstract Semiconductor-based magnetoresistance (MR) device has many advantages such as high MR ratio at low switching magnetic field, but electron spins were ignored completely in previous researches. Electron spins should impact on performance of semiconductor-based MR device, as electron spins interact with magnetic fields. By considering a semiconductor microstructure constructed on GaAs/AlxGa1-xAs heterostructure by patterning two asymmetric ferromagnetic (FM) stripes, we theoretically explore effect of electron spins on semiconductor-based MR device. An interesting spin splitting effect is found in semiconductor-based MR device. Both magnitude and sign of spin splitting effect can be modified by applying a negative voltage. These findings may be helpful for designing semiconductor-based MR devices.