Abstract The photovoltage response under low intensity pulse laser (473 nm) in the perovskite manganite p - n junction La 0.9 Li 0.1 MnO 3 /SrTiO 3 :Nb is investigated within… Click to show full abstract
Abstract The photovoltage response under low intensity pulse laser (473 nm) in the perovskite manganite p - n junction La 0.9 Li 0.1 MnO 3 /SrTiO 3 :Nb is investigated within a wide temperature range. The maximum photovoltage occurs at around the metal-insulator transition temperature (T MI, ~250 K) of La 0.9 Li 0.1 MnO 3 rather than the lowest temperature, which indicates that the low density charge induced by a weak light can be significantly affected by the leakage rather than the thermal carriers. Moreover, the time response of photovoltage shows distinct temperature-dependent and light intensity-dependent regularities in the temperature regions T MI and T >T MI respectively. The mechanisms are discussed according to the charge transport and magnetic phase transition of La 0.9 Li 0.1 MnO 3 .
               
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