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Abstract Reconfigurable FETs (RFETs) are optimized in planar Fully Depleted (FD) SOI. Their basics, electrostatics and performance are studied and compared with standard 28 nm FDSOI and other RFETs results in… Click to show full abstract
Abstract Reconfigurable FETs (RFETs) are optimized in planar Fully Depleted (FD) SOI. Their basics, electrostatics and performance are studied and compared with standard 28 nm FDSOI and other RFETs results in the literature. The main challenge for future broad adoption is analyzed and commented. Finally, some tips to improve the performance such as the asymmetric silicidation at source/drain are discussed.
Keywords:
field effect;
advanced cmos;
effect transistor;
reconfigurable field;
transistor advanced;
cmos advantages
Journal Title: Solid-state Electronics
Year Published: 2017
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Journal Title: Solid-state Electronics
Year Published: 2017
Link to full text (if available)
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recommendations!