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Abstract This paper presents three methods to experimentally extract the thermal resistance of bipolar transistors taking into account the Early effect. The approaches are improved variants of recently-proposed techniques relying… Click to show full abstract
Abstract This paper presents three methods to experimentally extract the thermal resistance of bipolar transistors taking into account the Early effect. The approaches are improved variants of recently-proposed techniques relying on common-base DC measurements. The accuracy is numerically verified by making use of a compact model calibrated on I–V characteristics of state-of-the-art SOG BJTs and SiGe:C HBTs.
Keywords:
taking account;
thermal resistance;
account early;
bipolar transistors;
transistors taking;
resistance bipolar
Journal Title: Solid-state Electronics
Year Published: 2017
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Journal Title: Solid-state Electronics
Year Published: 2017
Link to full text (if available)
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recommendations!