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Abstract In this paper, the HfO 2 -based resistive switching memory (RRAM) using carbon nanotubes (CNTs) as contact electrodes for high density integration is demonstrated. The Al/HfO 2 /CNTs devices… Click to show full abstract
Abstract In this paper, the HfO 2 -based resistive switching memory (RRAM) using carbon nanotubes (CNTs) as contact electrodes for high density integration is demonstrated. The Al/HfO 2 /CNTs devices show self-compliance, forming-free and low resistive state (LRS) nonlinearity with less than 130 nA reset current (I reset ). By contrast with the Al/HfO 2 /Ti devices, resistive switching behavior has been enhanced significantly by using CNTs electrode. For the Al/HfO 2 /CNTs devices, current–voltage (I-V) characteristics demonstrate that the current conduction in high resistive state (HRS) and low resistive state (LRS) is controlled by space-charge-limited current (SCLC) and trap-controlled SCLC mechanism, respectively.
Journal Title: Solid-state Electronics
Year Published: 2017
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