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Abstract Bias temperature instability (BTI) is one of the critical device degradation mechanisms in poly-Si/SiON and metal gate/high- k complementary metal-oxide-semiconductor (CMOS) technologies. Using the pre- and post-BTI flicker noise… Click to show full abstract
Abstract Bias temperature instability (BTI) is one of the critical device degradation mechanisms in poly-Si/SiON and metal gate/high- k complementary metal-oxide-semiconductor (CMOS) technologies. Using the pre- and post-BTI flicker noise measurements, we investigated the bulk trap density, N t, in both of these technologies. The low-frequency noise spectra were predominantly of 1/f γ type with γ TH degradation due to PBTI was noticed while considerable V TH degradation was observed for NBTI in both SiON and MGHK technologies. Both MGHK and SiON pFETs show a clear increase in the effective volume trap density, N t , after NBTI. The increase in N t in MGHK n-MOSFETs during PBTI is markedly higher than that in MGHK p-MOSFETs during NBTI.
Journal Title: Solid-state Electronics
Year Published: 2017
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