LAUSR

Abstract In this study, we have demonstrated 3D fin-structured channel Silicon-On-Insulator (SOI) tunneling field effect transistor (TFET) to enhance transistor on-current (Ion) by reducing leakage current and enhancing gate controllability. By comparing with planar TFET, the subthreshold swing (S.S) value is apparently reduced by ∼20 mV/dec with increased Ion using fin-typed TFET. Moreover, we have investigated impact of the interfacial layer (IL) modulation on the electrical characteristics of each planar TFET and fin-typed TFET, where IL modulation was performed by adopting modified chemical oxide as well as interface treatment. The IL modulation is substantial on the fin-typed TFET in terms of off leakage current (Ioff) as well as threshold voltage instability (ΔVth) against electrical stress, indicating 3D channel is more sensitive to interface condition. Our results suggest that alternative 3D structure with an appropriate interface treatment might be beneficial to attain better Ion while keeping lower S.S and Ioff.