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Abstract A new methodology for MOSFET characterization making use of the on-resistance characteristics Ron(Vg,Vd) = Vd/Id(Vg,Vd) and associated derivatives dRon/dVg and dRon/dVd is proposed. This approach enables to eliminate the influence of… Click to show full abstract
Abstract A new methodology for MOSFET characterization making use of the on-resistance characteristics Ron(Vg,Vd) = Vd/Id(Vg,Vd) and associated derivatives dRon/dVg and dRon/dVd is proposed. This approach enables to eliminate the influence of source-drain series resistance Rsd not only in linear region but also in non-linear region of MOSFET operation. Therefore, it allows for intrinsic MOSFET parameter extraction free from source and drain series resistance.
Keywords:
resistance based;
methodology;
novel resistance;
methodology mosfet;
resistance;
characterization
Journal Title: Solid-state Electronics
Year Published: 2020
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Journal Title: Solid-state Electronics
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!